Analytical and Implantation Services for external users

We offer the following analytical and implantation services for external users
please contact us for availabilty and quotation

• Conventional Rutherford backscattering element analysis of thin fillms
  - sensitivity down to 0.1 % or 1·10¹⁴ cm^-2
  - analysis of heavier elements starting from B
  - depth resolution about 10 nm




• Rutherford backscattering element analysis of thin fillms using MeV protons with external beam
  - analysis of light elements elements starting like B,N,O
  - depth resolution about 100 nm


• High resolution Rutherford backscattering element analysis of thin films
  - sensitivity down to 0.1 % or 1·10¹⁴ cm^-2
  - analysis of heavier elements starting from B
  - depth resolution about 1-2 nm in surface near regions
  - sample size about 1mm² to 1 cm²


• PIXE element analysis using MeV proton beams
  --- proton induced X-ray emission ---
  - sensitivity down to several 10 ppm
  - analysis of all ements starting from Na
  - no depth resolution, anayzed thickness about 10-20 µm
  - analyzed sample area 1mm²
  - analysis time up to 2 minutes
  - no sample preparation is needed. We extract the protons into air of He atmosphere.
  - samples must be at least 1mm² in diameter an can be very large
  - examples: coins, minerals, paintings, etal pieces, ceramics, jewellery, .....




• PIGE element analysis of Fluorine using MeV proton beams
  - sensitivity down to several 100 ppm
  - analysis thrpugh detection of gamma radiation
  - no depth resolution, anayzed thickness about 10-20 µm
  - analyzed sample area 1mm²
  - analysis time up to several minutes
  - no sample preparation is needed. We extract the protons into air of He atmosphere.
  - samples must be at least 1mm² in diameter an can be very large
  - examples: everything which might contain Fluorine


• Light element depth profiling using a 2.5 MeV external proton beam
  - analysis of B, C, N, O with Non-rutherford backscattering
  - up to 100 times more sensitive compared to Rutherfordscattering with He
  - beam spot ca. 1 mm²
  - analysis depth up to 15 µm with resolution of few hundered nm
  
  
• H profiling by Nuclear Reaction Analysis
  - analysis with 6.3 - 6.6 MeV ¹⁵N ion beam
  - sensitivity down to several ppm
  - depth resolution about 10 nm
  - sample size about 1 cm²




• H profiling in µm thick films by Coincidence ERDA with MeV external proton beam
  - analysis with 2-3 MeV proton ion beam
  - depth resolution about 100 nm
  - analysis of free standing films or samples with thickness up to 10 µm
  - beam spot size about 1 mm²




• Ultra-low energy ion irradiation and ion implantation with mass selected ions
  - energies from 30 keV down to 10 - 20 eV
  - nearly all ions, except Al,Si
  - available ion species: H,B,C,N,O,F,Ne,Ar,P,S,Mn,Se,Au,W and more
  - Fluences up to 10¹⁹ ions/cm², typical fluence for 2D materials 10¹⁵ ions/cm²
  - sample size up to 18x18 mm²
  - implantation of TEM grids possible




• Surface analysis using Auger spectroscopy
  - Electron energy 1 - 3 keV
  - sample size up to 18x18 mm²
  - analyzed area ca. 1 mm
  - sample transfer into UHV


• Ion implantation
  - ion energies up to 900 keV at ion implanter
  - ion energies up to 9 MeV at Tandem accelerator
  - nearly all ions
  - implantated area up to 2x2 cm²
  - implantation at low Temperature (liquid nitrogen) possible




• Low level gamma spectroscopy
  - analysis of low activities down to < 1 Bq/l for the isotpes
  - Cs-137, K-40, Co-60, Na-22
  - see page " Radioisotopes and environmental radioactivity"




• Atomic force microscopy
  
  PARK Systems XE-100
  
  - surface topography analysis
  - surface conductivity analysis using a conductive tip